PEALD

Product description: PEALD
INQUIRY

Crosstech is proud to introduce the latest revolutionary addition toour product line, the PEALD system.
PEALD has the such advantages over other conventional deposition methods as excellent uniform thickness, low processing temperature, and precise film thickness control.
ICP plasma enhanced atomic layer deposition has many advantages, such
as the wide process window, high film density, low impurity contents, and broad choice of precursor chemistry and/or reactants compared to the conventional ALD and metal organic atomic layer deposition (MOALD)Methods. KVA-4000 series is designed and developed to unique hot wall, top flow, dual-chamber and also, KVAC-4000,KVA-ICP4000 series, KVA-CCP4000 series has the deposition of highest quality film withexcellent uniformity.

ITEM	Specifications
Chamber	Process & Loadlock Chamber
Substrate size	Piece to 6 inches
Substrate Heating	Temperature range: up to 752°F (400°F) Temperature Uniformity: ±41°F (±5°C)
Base Pressure & Operation Pressure	Less than 1.0E-3 Torr: Rotary or Dry pump Less than 1.0E-6 Torr: Turbo Molecular Pump (Option) Process < 10 Torr: Rotary or Dry pump
Plasma Source	CCP Type: RF Power: 300W
Gas Nozzle	2 channel
Precursors	Up to 2, Temperature: 250°C (Jacket)
Mass flow controller	Precusor: Ar(Bubbling) / Purge: Ar or N2 Reactant(Plasma): O2, NH3, H2, etc..
Auto Pressure Controller	Throttle valve & Baratron Sensor